Our first step to direct writing XUV lithography(SPPT 24th.,2010)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00352880" target="_blank" >RIV/68081731:_____/10:00352880 - isvavai.cz</a>
Alternative codes found
RIV/61389021:_____/10:00352880
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Our first step to direct writing XUV lithography(SPPT 24th.,2010)
Original language description
Předneseno na konf.:24th Symposium on Plasma Physics and Technology,Prague,14-17.06.2010, : A "direct (i.e. ablation) patterning" of PMMA by pulse Ar8+ ion laser ( = 46,9 nm) was demonstrated. For focusing a long-focal spherical mirror (R = 2100 mm) covered by 14 double-layer Sc-Si coating was used. On the bottom of ablated crater a laser-induced periodic surface structure (LIPSS) with period 2,8 m and depth 5-10 nm was revealed. Through much smaller quadratic hole (7,5x7,5 m) in mask standing in contact with PMMA the 2D diffraction pattern with period down to 125 nm and depth 200 nm was ablated by a 5-shot-exposition.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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