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Variable-shape E-beam litography: Proximity effect simulation of 3D micro and nano sructures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F12%3A00390982" target="_blank" >RIV/68081731:_____/12:00390982 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Variable-shape E-beam litography: Proximity effect simulation of 3D micro and nano sructures

  • Original language description

    A proximity effect simulation technique and developed resist profile simulation for variable-shaped e-beam lithography of three dimensional structures are presented. The e-beam lithography is a technology process which allows high resolution patterning.Most frequently it is used for microfabrication or nanofabrication of two dimensional relief structures such as resist photo masks, etching masks, diffraction gratings, micro and nano optics, photonics and more. However, in the case of the 3D structurespatterning the precise thickness control of developed resist is required. With regard to subsequent proximity effect correction, the proximity effect simulation and developed resist profile simulation models are in the case of 3D structures fabrication critically important. We show the results from simulation of exposure and resist development process for the chosen polymer resist (PMMA), using the patterning and simulation e-beam lithography software.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    NANOCON 2012, 4th International Conference Proceedings

  • ISBN

    978-80-87294-32-1

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    729-732

  • Publisher name

    TANGER Ltd

  • Place of publication

    Ostrava

  • Event location

    Brno

  • Event date

    Oct 23, 2012

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article