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Stabilized semiconductor laser source for high-resolution interferometry

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F16%3A00464548" target="_blank" >RIV/68081731:_____/16:00464548 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Stabilized semiconductor laser source for high-resolution interferometry

  • Original language description

    We have assembled an experimental iodine stabilized Distributed Bragg Reflector (DBR) diode based laser system lasing at a wavelength that is in a close proximity to the wavelength of a stabilized He-Ne lasers traditionally used for metrological applications . The aim was to verify whether such a system could be used as an alternative to the He-Ne laser while yielding wider optical frequency tuning range, higher output power and high frequency modulationncapability. We have measured the basic characteristics of the laser source and then we have compared the performance of the laser system with that of a traditional frequency stabilized He-Ne laser with a series of experimental arrangements similar to those usually found in laser interferometry and displacement metrology applications. The results indicate that DBR diode laser system provides a good laser source for applications in dimensional (nano)metrology since it provides more output power and advanced tunability options than stabilized He-Ne lasers while maintaining fundamental requirements such as the frequency stability, coherence length and also a defined traceability.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    EUSPEN 2016. Proceedings of the 16th International Conference of the European Society for Precision Engineering and Nanotechnology

  • ISBN

    978-095667908-6

  • ISSN

  • e-ISSN

  • Number of pages

    3

  • Pages from-to

    "1.3.1"-"1.3.3"

  • Publisher name

    Euspen

  • Place of publication

    Nottingham

  • Event location

    Nottingham

  • Event date

    May 30, 2016

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article