Downsizing the Channel Length of Vertical Organic Electrochemical Transistors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F23%3A00573395" target="_blank" >RIV/68081731:_____/23:00573395 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26620/23:PU148258 RIV/00177016:_____/23:N0000142

Result on the web

<a href="https://pubs.acs.org/doi/10.1021/acsami.3c02049" target="_blank" >https://pubs.acs.org/doi/10.1021/acsami.3c02049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.3c02049" target="_blank" >10.1021/acsami.3c02049</a>

Result language

angličtina

Original language name

Downsizing the Channel Length of Vertical Organic Electrochemical Transistors

Original language description

Organic electrochemical transistors (OECTs) are promising building blocks for bioelectronic devices such as sensors and neural interfaces. While the majority of OECTs use simple planar geometry, there is interest in exploring how these devices operate with much shorter channels on the submicron scale. Here, we show a practical route toward the minimization of the channel length of the transistor using traditional photolithography, enabling large-scale utilization. We describe the fabrication of such transistors using two types of conducting polymers. First, commercial solution-processed poly(dioxyethylenethiophene):poly(styrene sulfonate), PEDOT:PSS. Next, we also exploit the short channel length to support easy in situ electropolymerization of poly(dioxyethylenethiophene):tetrabutyl ammonium hexafluorophosphate, PEDOT:PF6. Both variants show different promising features, leading the way in terms of transconductance (gm), with the measured peak gm up to 68 mS for relatively thin (280 nm) channel layers on devices with the channel length of 350 nm and with widths of 50, 100, and 200 μm. This result suggests that the use of electropolymerized semiconductors, which can be easily customized, is viable with vertical geometry, as uniform and thin layers can be created. Spin-coated PEDOT:PSS lags behind with the lower values of gm, however, it excels in terms of the speed of the device and also has a comparably lower off current (300 nA), leading to unusually high on/off ratio, with values up to 8.6 × 104. Our approach to vertical gap devices is simple, scalable, and can be extended to other applications where small electrochemical channels are desired.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20506 - Coating and films

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Volume of the periodical

15

Issue of the periodical within the volume

22

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

27002-27009

UT code for WoS article

001012184600001

EID of the result in the Scopus database

2-s2.0-85162204290