Scintillation characteristics and radiation damage of Ce-doped Bi 4Si 3O 12 single crystals.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F01%3A02010315" target="_blank" >RIV/68378271:_____/01:02010315 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Scintillation characteristics and radiation damage of Ce-doped Bi 4Si 3O 12 single crystals.

Original language description

Ce was doped into BSO at 0.1,0.2 and 0.4 at and the grown crystals were analyzed. For the Ce doping at 0.1 at., the light yield decreased by 40 while the average decay constant decreased by 20 (from 105 ns to 8

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/ME%20159" target="_blank" >ME 159: New scintillator materials for scientific, medical and industrial applications</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Japanese Journal of Applied Physics. I

ISSN

0021-4922

e-ISSN

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Volume of the periodical

40

Issue of the periodical within the volume

3A

Country of publishing house

JP - JAPAN

Number of pages

7

Pages from-to

1360-1366

UT code for WoS article

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EID of the result in the Scopus database

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