Photovoltage spectroscopy od InAs/GaAs quantum dot structures.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020064" target="_blank" >RIV/68378271:_____/02:02020064 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Photovoltage spectroscopy od InAs/GaAs quantum dot structures.

Original language description

We have shown that surface photovoltage spectroscopy can be used for the study of single as well as multiple quantum dot structures. Large dots were observed by photovoltage spectroscopy. They are created in the case of stacked QDs in structures with thin spacer layer.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

91

Issue of the periodical within the volume

12

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

10103-10106

UT code for WoS article

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EID of the result in the Scopus database

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