A Raman study of GaAsN, GaInAsN layers on bevelled samples.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020140" target="_blank" >RIV/68378271:_____/02:02020140 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
A Raman study of GaAsN, GaInAsN layers on bevelled samples.
Original language description
Bevelled structures of strained and relaxed GaAsN and GaInAsN layers have been investigated by Raman spectroscopy. The ratio of TO/LO phonon intensities (I TO /I LO ) along the bevelled structures was evaluated.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Science and Engineering. B
ISSN
0921-5107
e-ISSN
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Volume of the periodical
91-92
Issue of the periodical within the volume
N/A
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
87-90
UT code for WoS article
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EID of the result in the Scopus database
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