Thin amorphous chalcogenide films prepared by pulsed laser deposition.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020142" target="_blank" >RIV/68378271:_____/02:02020142 - isvavai.cz</a>
Alternative codes found
RIV/00216275:25310/02:00000087 RIV/00216275:25310/02:00000084
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Thin amorphous chalcogenide films prepared by pulsed laser deposition.
Original language description
The structure of Ge-Ga-Se thin films was studied by Raman spectroscopy, GeSe 4/2 tetrahedra, edge-sharing Ge 2 Se 8/2 bi-tetrahedra, some Ge-Ge and Ge-Ga or Ga-Ga as well as Se-Se structural units were revealed.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Non-Crystalline Solids
ISSN
0022-3093
e-ISSN
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Volume of the periodical
299-302
Issue of the periodical within the volume
N/A
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
1013-1017
UT code for WoS article
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EID of the result in the Scopus database
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