Rapid crystallization of amorphous silicon at room temperature.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020340" target="_blank" >RIV/68378271:_____/02:02020340 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Rapid crystallization of amorphous silicon at room temperature.
Original language description
A way which thin films of hydrogenated amorphous silicon can be instantaneously crystallized at room temperature is reported.The metal-induced solid-phase crystallization method with nickel surface coverage is used.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Philosophical Magazine. B
ISSN
1364-2812
e-ISSN
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Volume of the periodical
82
Issue of the periodical within the volume
17
Country of publishing house
GB - UNITED KINGDOM
Number of pages
9
Pages from-to
1785-1793
UT code for WoS article
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EID of the result in the Scopus database
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