Electronic states in Ga 1-x Mn x As: Substitutional versus interstitial position of Mn.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02030062" target="_blank" >RIV/68378271:_____/02:02030062 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electronic states in Ga 1-x Mn x As: Substitutional versus interstitial position of Mn.

Original language description

The electronic structure of (Ga, Mn)As crystals with Mn is substitutional, interstitial, and both positions was calculated. It is shown that the interstitial Mn acts as a double donor and compensates the holes created by two Mn atoms in substitutional positions.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review. B

ISSN

0163-1829

e-ISSN

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Volume of the periodical

65

Issue of the periodical within the volume

23

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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