MOVPE grown InAs/GaAs quantum nanostructures.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A02030255" target="_blank" >RIV/68378271:_____/03:02030255 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

MOVPE grown InAs/GaAs quantum nanostructures.

Original language description

Structures with quantum size objects as self-organised InAs quantum dots, quantum rings and quasi-quantum wells in GaAs matrix, were grown by Low Pressure Metal-Organic Vapour Phase epitaxy. Photoluminescence, photovoltaic absorption measurement, photocurrent spectroscopy AFM and TEM were used as the characterization methods for the growth optimisation.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/IAA1010318" target="_blank" >IAA1010318: Radiative recombination machanism of subnanometric InAs/GaAs laser structures</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Annual Meeting of Tchai-wan Physical Society.

ISBN

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ISSN

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e-ISSN

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Number of pages

1

Pages from-to

67-67

Publisher name

xx

Place of publication

Tachai-wan

Event location

Huanglian [TW]

Event date

Feb 12, 2003

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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