Scintillating properties of Bi-doped Y3Ga5O12
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F04%3A00001077" target="_blank" >RIV/68378271:_____/04:00001077 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Scintillating properties of Bi-doped Y3Ga5O12
Original language description
Shaped single crystals of Bi:Y3Ga5O12 were grown by the micro-pulling-down method.Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy 6s2->6s6p transition of Bi3+,while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of excited Bi3+ centres
Czech name
Scintilační vlastnosti Y3Ga5O12 dopovaného Bi
Czech description
Tvarované Bi:Y3Ga5O12 monokrystaly byly pěstovány metodou "micropulling-down".Přechod 6s2->6s6p na iontu Bi3+ je zodpovědný za absorpční pás u 288 nm a luminescnční pás u 314 nm
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/1P04ME716" target="_blank" >1P04ME716: New scintillator Materials for Scientific, Medical and Industrial Applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Korean Crystal Growth and Crystal Technology
ISSN
1225-1429
e-ISSN
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Volume of the periodical
14
Issue of the periodical within the volume
6
Country of publishing house
KR - KOREA, REPUBLIC OF
Number of pages
3
Pages from-to
233-235
UT code for WoS article
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EID of the result in the Scopus database
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