Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F07%3A00081663" target="_blank" >RIV/68378271:_____/07:00081663 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations
Original language description
The Mn incorporation and hole-mediated ferromagnetism is studied in mixed semiconductors Ga(As,P) and (Al,Ga)As. With increasing concentration of P the Curie temperature remarkably increases and the formation of interstitial Mn is suppressed.
Czech name
Manganem dopované Ga(As,P) a (Al,Ga)As feromagnetické polovodiče: výpočty elektronové struktury
Czech description
Je studováno zabudování Mn a feromagnetické chování ve směsných polovodičích Ga(As,P) a (Al,Ga)As. S rostoucí koncentrací P v Ga(As,P) se významně zvyšuje Curierova teplota a je potlačen vznik intersticiálního Mn.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review. B
ISSN
1098-0121
e-ISSN
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Volume of the periodical
75
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
"045202/1"-"045202/6"
UT code for WoS article
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EID of the result in the Scopus database
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