Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F08%3A00312859" target="_blank" >RIV/68378271:_____/08:00312859 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As
Original language description
We demonstrate experimentally that lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. Complete phenomenological AMR expressions are derived and new higher order terms are reported in experiments.
Czech name
Litograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As
Czech description
Experimentálně je ukázáno, ze litograficky nebo elektricky ovládané mechanické deformace v (Ga,Mn)As dávají vzniknout velmi silným krystalickým komponentám AMR. Jsou odvozeny úplné fenomenologické vzorce pro AMR.

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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