Scintillation properties of LuAG:Ce single crystalline films grown by LPE method
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00337872" target="_blank" >RIV/68378271:_____/09:00337872 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Scintillation properties of LuAG:Ce single crystalline films grown by LPE method
Original language description
LuAG:Ce scintillator thin films were grown by liquid phase epitaxy using two types of flux: PbO-B2O3 and BaO-B2O3-BaF2. Films have been compared in terms of photoelectron yield, its time dependence and FWHM. Experimental setup: hybrid photomultiplier, NIM elektronics and alpha-particle source.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F08%2F0893" target="_blank" >GA202/08/0893: Novel materials and technologies for thick film scintillators</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů