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Bravais lattice diversity of III-V semiconductors: A comparative study of GaSb(001) and GaAs(001) surface reconstructions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00338241" target="_blank" >RIV/68378271:_____/09:00338241 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Bravais lattice diversity of III-V semiconductors: A comparative study of GaSb(001) and GaAs(001) surface reconstructions

  • Original language description

    Lattice distortion of the (4x3) reconstruction family of GaSb(001) is compared to the GaAs(001) beta-(2x4) and c(4x4) reconstructions. Low energy differences would allow for the existence of phase shifted reconstruction regions on short distances which explains, for instance, the thermodynamic stability of the GaSb(001) (4x3) reconstructions, predicted by DFT and observed by STM.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/IAA100100628" target="_blank" >IAA100100628: Electron attenuation length at crystal surfaces</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2009

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů