Bravais lattice diversity of III-V semiconductors: A comparative study of GaSb(001) and GaAs(001) surface reconstructions
Result description
Lattice distortion of the (4x3) reconstruction family of GaSb(001) is compared to the GaAs(001) beta-(2x4) and c(4x4) reconstructions. Low energy differences would allow for the existence of phase shifted reconstruction regions on short distances which explains, for instance, the thermodynamic stability of the GaSb(001) (4x3) reconstructions, predicted by DFT and observed by STM.
Keywords
The result's identifiers
Result code in IS VaVaI
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Bravais lattice diversity of III-V semiconductors: A comparative study of GaSb(001) and GaAs(001) surface reconstructions
Original language description
Lattice distortion of the (4x3) reconstruction family of GaSb(001) is compared to the GaAs(001) beta-(2x4) and c(4x4) reconstructions. Low energy differences would allow for the existence of phase shifted reconstruction regions on short distances which explains, for instance, the thermodynamic stability of the GaSb(001) (4x3) reconstructions, predicted by DFT and observed by STM.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
IAA100100628: Electron attenuation length at crystal surfaces
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Result type
O - Miscellaneous
CEP
BM - Solid-state physics and magnetism
Year of implementation
2009