Effect of local doping on the electronic properties of epitaxial graphene on SiC

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00343352" target="_blank" >RIV/68378271:_____/10:00343352 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Effect of local doping on the electronic properties of epitaxial graphene on SiC

Original language description

Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interactionwith the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have beenfound to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi. A

ISSN

1862-6300

e-ISSN

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Volume of the periodical

207

Issue of the periodical within the volume

3

Country of publishing house

DE - GERMANY

Number of pages

4

Pages from-to

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UT code for WoS article

000276339800021

EID of the result in the Scopus database

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