Raman scattering in silicon disordered by gold ion implantation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00346873" target="_blank" >RIV/68378271:_____/10:00346873 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/10:00346873
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Raman scattering in silicon disordered by gold ion implantation
Original language description
Si (111) covered by a 250-nm thick SiO2 surface layer has been disordered through implantation of 3.035 MeV gold ions within broad range of fluences from 1 x 10(13) ions/cm(2) to 1 x 10(16) ions/cm(2). Raman spectroscopy (514.5 nm laser) was applied forcharacterization of the silicon disordering. Variation of the Raman spectra of silicon after low-fluence implantation (fluences lower than 5 x 10(14) ions/cm(2)) in the vicinity of the transverse optical phonon (1TO) peak reflects the coexistence of bulkSi crystals (c-Si) and Si nanocrystals (nc-Si) in the implanted layer. Implantation with higher fluences yields only the stable 470 cm(-1) 1TO peak, corresponding to formation of amorphous phase (a-Si), in this region of the spectra. Detailed analysis of the silicon disorder was performed through calculation of the transverse acoustical phonon (1TA) peak area.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi B-Basic Solid State Physics
ISSN
0370-1972
e-ISSN
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Volume of the periodical
247
Issue of the periodical within the volume
8
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
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UT code for WoS article
000281092600031
EID of the result in the Scopus database
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