Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00349319" target="_blank" >RIV/68378271:_____/10:00349319 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface

Original language description

Radiation detector structures made of semiinsulating GaAs were prepared with a new kind of low-work function metallization. I-V curves were measured in different geometries of both top and bottom contacts. Anomalous decrease of the reverse current observed for Mg and Gd contacts is discussed.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA202%2F07%2F0525" target="_blank" >GA202/07/0525: Deep defects in semiconductors for optoelectronic applications</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

SURFINT-SREN II

ISBN

978-80-223-2723-7

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

Comenius University

Place of publication

Bratislava

Event location

Florence

Event date

Nov 16, 2009

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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