Stabilization of semiconductor surface reconstructions by configurational entropy

Result code in IS VaVaI

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Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Stabilization of semiconductor surface reconstructions by configurational entropy

Original language description

Surface unit cells with a larger area and a reduced symmetry have a larger configurational entropy. The entropy may even stabilize reconstructions with higher energy at finite temperatures. We study the entropy contribution to surface reconstructions onthe basis of ground-state calculations employing density-functional theory. Specifically, the ground-state GaSb(111)A surface reconstruction has a (22) symmetry, but at elevated temperatures, we experimentally observe the (2323)-R30° symmetry in agreement with the theoretical results. The findings based on the general expressions are consistent with experimental data from other semiconductor surfaces.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review. B

ISSN

1098-0121

e-ISSN

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Volume of the periodical

82

Issue of the periodical within the volume

12

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

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UT code for WoS article

000281845900006

EID of the result in the Scopus database

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