Directly grown nanocrystalline diamond field-effect transistor microstructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00353839" target="_blank" >RIV/68378271:_____/10:00353839 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Directly grown nanocrystalline diamond field-effect transistor microstructures
Original language description
Nanocrystalline diamond microscopic structures (5 ?m width) are grown directly on Si/SiO2 substrates by patterning of a nucleation layer using photolithography prior to the diamond growth. The diamond microstructures exhibit clear transistor characteristics in both solid-state and solution-gated field-effect transistor configurations.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Sensor Letters
ISSN
1546-198X
e-ISSN
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Volume of the periodical
8
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
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UT code for WoS article
000278291700020
EID of the result in the Scopus database
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