Composition engineering in cerium-doped (Lu,Gd)3(Ga,Al)5O12 single crystal scintillators
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00370566" target="_blank" >RIV/68378271:_____/11:00370566 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1021/cg200694a" target="_blank" >http://dx.doi.org/10.1021/cg200694a</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/cg200694a" target="_blank" >10.1021/cg200694a</a>
Alternative languages
Result language
angličtina
Original language name
Composition engineering in cerium-doped (Lu,Gd)3(Ga,Al)5O12 single crystal scintillators
Original language description
The Ce-doped (LuyGd1_x)3(Gay,Al1_y)5O12 single crystals were grown by the micropulling down method. Their structure and chemical composition were checked by X-ray diffraction (XRD) and electron probe microanalysis (EPMA) techniques. Optical, luminescent,and scintillation characteristics were measured by the methods of time-resolved luminescence spectroscopy, including the light yield and scintillation decay. Balanced Gd and Ga admixture into the Lu3Al5O12 structure provided an excellent scintillator where the effect of shallow traps was suppressed, the spectrally corrected light yield value exceeded 40 000 photons/MeV, and scintillation decay was dominated by a 53 ns decay time value which is close to that of Ce3+ photoluminescence decay.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F08%2F0893" target="_blank" >GA202/08/0893: Novel materials and technologies for thick film scintillators</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Crystal Growth & Design
ISSN
1528-7483
e-ISSN
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Volume of the periodical
11
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
4484-4490
UT code for WoS article
000295488200036
EID of the result in the Scopus database
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