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Magneto-oscillation phase anomalies in bilayer graphene with broken inversion symmetry

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00392679" target="_blank" >RIV/68378271:_____/11:00392679 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.3666629" target="_blank" >http://dx.doi.org/10.1063/1.3666629</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.3666629" target="_blank" >10.1063/1.3666629</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Magneto-oscillation phase anomalies in bilayer graphene with broken inversion symmetry

  • Original language description

    Our theory shows that magneto-oscillation phases in biased graphene bilayers, with broken inversion symmetry and a finite gap between the valence and conduction bands, behave anomalously. Similarly to unbiased bilayers, magneto-oscillations are only asymptotically periodic and for low magnetic fields reach the frequencies predicted quasiclassically. The frequencies are the same for K and K', but the quantum approach yields the valley-dependent gate-tunable phase corrections which give rise to two seriesof magneto-oscillations with the same frequency but shifted in phase.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors

  • ISBN

    978-0-7354-1002-2

  • ISSN

  • e-ISSN

  • Number of pages

    2

  • Pages from-to

    821-822

  • Publisher name

    AIP

  • Place of publication

    Melville

  • Event location

    Seoul

  • Event date

    Jul 25, 2010

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000301053000390