Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00384869" target="_blank" >RIV/68378271:_____/12:00384869 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14740/12:00060837
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.86.115305" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.86.115305</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.86.115305" target="_blank" >10.1103/PhysRevB.86.115305</a>
Alternative languages
Result language
angličtina
Original language name
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Original language description
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At I>3 W.cm2, additional bands with a quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The observed transition energies are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review. B
ISSN
1098-0121
e-ISSN
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Volume of the periodical
86
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
"115305-1"-"115305-8"
UT code for WoS article
000308288300008
EID of the result in the Scopus database
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