Relation of defects and grain boundaries to transport and photo-transport: solved and unsolved problems in microcrystalline silicon

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00388925" target="_blank" >RIV/68378271:_____/12:00388925 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2011.09.033" target="_blank" >http://dx.doi.org/10.1016/j.jnoncrysol.2011.09.033</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2011.09.033" target="_blank" >10.1016/j.jnoncrysol.2011.09.033</a>

Result language
angličtina
Original language name
Relation of defects and grain boundaries to transport and photo-transport: solved and unsolved problems in microcrystalline silicon
Original language description
Defects and grain boundaries play a crucial role in the dark and photo-transport of charge carriers. Surprisingly, the transport (trapping and recombination) in microcrystalline silicon is better understood at low temperatures, while room-temperature operation is of interest for real-life devices. In the first part of this review, the advantages of photo-transport techniques, used for the defect density evaluation, will be recapitulated and commented on.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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