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Comparison of the growth of ultrathin silver film by pulsed laser deposition and magnetron sputtering

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00390533" target="_blank" >RIV/68378271:_____/12:00390533 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Comparison of the growth of ultrathin silver film by pulsed laser deposition and magnetron sputtering

  • Original language description

    Silver thin films exhibit unusual properties and performances due to unique electrical and optical properties of silver. The films attract attention in eg. photonics, electronics, sensors and biophysics. Particular application requires the film of special morphology, ie. isolated nanoparticles, arrays, or smooth surface. It is important to choose proper deposition technique and understand mechanism of silver nucleation and growth to better control the film properties. Hence, we investigate and compare the growth of ultrathin silver film by pulsed laser deposition (PLD) and magnetron sputtering techniques. A silver target was ablated by a Nd:YAG laser operating at wavelength of 266 nm and pulse length of 4 ns in case of PLD. Silver RF magnetron sputtering was performed at power varied from 30 to 100 W. Both experiments were carried out in argon atmosphere of pressure varied from 0.5 to 3 Pa. We focus on in-situ monitoring of electrical and optical properties of the growing layer.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů