Atomic and electronic structure of N-terminated GaN(0001) (1 1) surface

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00390686" target="_blank" >RIV/68378271:_____/12:00390686 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1742-6596/398/1/012013" target="_blank" >http://dx.doi.org/10.1088/1742-6596/398/1/012013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/398/1/012013" target="_blank" >10.1088/1742-6596/398/1/012013</a>

Result language
angličtina
Original language name
Atomic and electronic structure of N-terminated GaN(0001) (1 1) surface
Original language description
The atomic and electronic structures of the polar GaN(000-1) surface were investigated by x-ray photoelectron diffraction (XPD) and ab initio density-functional theory (DFT) calculations. A well-ordered GaN(000-1) surface of a free-standing GaN wafer wasprepared by sample annealing in a NH3 atmosphere. A N-terminated bare (1 x1) structure was confirmed. An electronic band structure was investigated by DFT calculations. The surface state at the top of the valence band was localized for a relaxed (1x1) structure. The energy loss function (ELF) was computed in the framework of the many-body perturbation theory. Plasmon loss peak positions were found to be in good agreement with reflection-electron energy loss spectroscopy (REELS) measurements.
Czech name
—
Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GPP204%2F10%2FP028" target="_blank" >GPP204/10/P028: Electron energy losses at solid surfaces</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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