Competition between thermally activated and tip-induced hopping of indium atoms on Si(100)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00390822" target="_blank" >RIV/68378271:_____/12:00390822 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/12:10130561
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.85.081403" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.85.081403</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.85.081403" target="_blank" >10.1103/PhysRevB.85.081403</a>

Result language
angličtina
Original language name
Competition between thermally activated and tip-induced hopping of indium atoms on Si(100)
Original language description
The adsorption and dynamics of single indium atoms on a Si(100) surface were studied by means of scanning tunneling microscopy in a temperature range from 30 to 130 K. Single In adatoms are strongly influenced by a tip-surface interaction which is proportional to the tunneling current.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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