Gas sensing properties of IDT devices employing H-terminated NCD films and their nano-structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00391800" target="_blank" >RIV/68378271:_____/12:00391800 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Gas sensing properties of IDT devices employing H-terminated NCD films and their nano-structures
Original language description
Embedded metal electrode in IDTs (novel concept). Surface conductivity, H-termination of is crucial. Surface conductivity sensitive to testing gas (oxidizing/reducing). Largest surface conductivity for fosgene. Temperature experiments, optimal temperature.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the International Workshop on Diamond Nanotechnology and Science Progress - DINAS 2011
ISBN
978-80-260-1593-2
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
20-22
Publisher name
Institute of Physics ASCR
Place of publication
Prague
Event location
Prague
Event date
Jun 15, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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