Power-law photoluminescence decay in indirect gap quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00395142" target="_blank" >RIV/68378271:_____/13:00395142 - isvavai.cz</a>
Alternative codes found
RIV/61389013:_____/13:00395142
Result on the web
<a href="http://dx.doi.org/10.1016/j.mee.2013.03.139" target="_blank" >http://dx.doi.org/10.1016/j.mee.2013.03.139</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mee.2013.03.139" target="_blank" >10.1016/j.mee.2013.03.139</a>
Alternative languages
Result language
angličtina
Original language name
Power-law photoluminescence decay in indirect gap quantum dots
Original language description
In a certain contrast to the standard expectation, according to which the photoluminescence intensity decay in quantum dots could have the mathematical form of exponential function, some experiments indicate a slower type of the intensity decay development, namely in the form of the power-law functional dependence. We are presenting a theoretical interpretation of this phenomenon based on the electron?phonon interaction taken into account in an approximation going beyond the limits of the perturbation theory. We use a simple though quite realistic model of two electronic bound states representing the basic features of the electron in the conduction band states of the InAs small quantum dot. Within this model, the photoluminescence intensity is connected with the electronic level occupation up-conversion process. The electron?phonon coupling is taken into account with the help of the quantum kinetic equations developed with the nonequilibrium Green?s functions.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BE - Theoretical physics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Microelectronic Engineering
ISSN
0167-9317
e-ISSN
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Volume of the periodical
111
Issue of the periodical within the volume
November
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
170-174
UT code for WoS article
000322751300033
EID of the result in the Scopus database
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