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Electric-field-tunable defect mode in one-dimensional photonic crystal operating in the terahertz range

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00395183" target="_blank" >RIV/68378271:_____/13:00395183 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4809821" target="_blank" >http://dx.doi.org/10.1063/1.4809821</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4809821" target="_blank" >10.1063/1.4809821</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electric-field-tunable defect mode in one-dimensional photonic crystal operating in the terahertz range

  • Original language description

    A one-dimensional photonic crystal possessing an electric-field-tunable defect mode in the lowest forbidden band is demonstrated. The compact photonic structure consists of two symmetric Bragg mirrors made of alternate quarter-wave layers of SiO2 and CeO2 separated by a defect layer of an incipient ferroelectric SrTiO3 with electrodes transparent for terahertz radiation on its both sides. The applied bias is then perpendicular to the layer and modifies the in-plane dielectric function, which is probed by the transverse terahertz wave. The observed tunable behavior is in agreement with the model of the ferroelectric soft mode behavior in SrTiO3 single crystals. The defect-mode frequency tunability is proportional to that of the soft mode: we achieved arelative tunability of 6.5% at 105K under an electric bias of 60 kV/cm.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA13-12386S" target="_blank" >GA13-12386S: Photoconductivity and dynamics of excitations in nanostructured and disordered semiconductors on ultrafast time scale</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

  • Volume of the periodical

    102

  • Issue of the periodical within the volume

    24

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    "241106-1"-"241106-5"

  • UT code for WoS article

    000320962400006

  • EID of the result in the Scopus database