GaN polarity determination by photoelectron diffraction

Result code in IS VaVaI

RIV/68378271:_____/13:00396607 - isvavai.cz

Result on the web

http://apl.aip.org/resource/1/applab/v103/i9/p091601_s1?isAuthorized=no

DOI - Digital Object Identifier

10.1063/1.4819761

Result language

angličtina

Original language name

GaN polarity determination by photoelectron diffraction

Original language description

A nondestructive approach to determine the wurtzite GaN crystal polarity based on X-ray photoelectron diffraction is proposed. The approach, utilizing the ratio of photoemitted electron currents excited by a standard laboratory X-ray source from the N 1slevel in the (10 -10) plane at polar angles of 20 and 25 , is tested on GaN crystals. The photoelectron intensity ratio I20/I25 is larger or smaller than unity for GaN(0001) or GaN(000 -1), respectively. The approach can be used for polarity determination of other binary wurtzite crystals. The atom with the smaller electron scattering cross-section should be used as the emitter.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

GBP108/12/G108: Preparation, modification and characterization of materials by radiation

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Letters

ISSN

0003-6951

e-ISSN

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Volume of the periodical

103

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

"091601-1"-"091601-4"

UT code for WoS article

000323846900015

EID of the result in the Scopus database

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