Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate
Result description
The photoluminescence eigenmodes of the ZnO semiconductor microcavity on a Ag/Si substrate at room temperature. The photoluminescence modes do not depend on the excitation intensity. The eigenmode in the microcavity is considered to be the perpendicularFabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the effective refractive index from original 2.0 to 1.67 at the wavelength of 585 nm. Meanwhile, there is also a coupling between theplasmon and the exciton-polariton in the band-edge region, and the effective refractive index 1.92 is in good agreement between the experimental and the theoretical results.
Keywords
The result's identifiers
Result code in IS VaVaI
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate
Original language description
The photoluminescence eigenmodes of the ZnO semiconductor microcavity on a Ag/Si substrate at room temperature. The photoluminescence modes do not depend on the excitation intensity. The eigenmode in the microcavity is considered to be the perpendicularFabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the effective refractive index from original 2.0 to 1.67 at the wavelength of 585 nm. Meanwhile, there is also a coupling between theplasmon and the exciton-polariton in the band-edge region, and the effective refractive index 1.92 is in good agreement between the experimental and the theoretical results.
Czech name
—
Czech description
—
Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
LH12186: Mechanism of energy and charge transfer in semiconductor nanostructures
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics A - Materials Science & Processing
ISSN
0947-8396
e-ISSN
—
Volume of the periodical
112
Issue of the periodical within the volume
4
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
821-825
UT code for WoS article
000322670700003
EID of the result in the Scopus database
—
Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2013