High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00399884" target="_blank" >RIV/68378271:_____/13:00399884 - isvavai.cz</a>
Alternative codes found
RIV/61389021:_____/13:00399884
Result on the web
<a href="http://dx.doi.org/10.1557/jmr.2012.211" target="_blank" >http://dx.doi.org/10.1557/jmr.2012.211</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1557/jmr.2012.211" target="_blank" >10.1557/jmr.2012.211</a>

Result language
angličtina
Original language name
High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas
Original language description
In the recent years, there was a growing interest for electronic devices operating in very harsh environments, at elevated temperatures, high power, high frequency, and high radiation fields.1,2 In that context, silicon carbide (SiC) is one of the most promising wide band gap materials for these devices due to its high breakdown electric field, high electron saturation velocity, high operating temperature, and high radiation hardness properties.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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