Defect engineering in Ce-doped aluminum garnet single crystal scintillators

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00435845" target="_blank" >RIV/68378271:_____/14:00435845 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/14:00218453

Result on the web

<a href="http://dx.doi.org/10.1021/cg501005s" target="_blank" >http://dx.doi.org/10.1021/cg501005s</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/cg501005s" target="_blank" >10.1021/cg501005s</a>

Result language

angličtina

Original language name

Defect engineering in Ce-doped aluminum garnet single crystal scintillators

Original language description

Mg-codoped Lu3Al5O12:Ce single crystal scintillators were prepared by a micropulling down method in a wide concentration range from 0 to 3000 ppm of Mg codopant. Their structure and chemical composition were checked by X-ray diffraction and electron probe microanalysis techniques. Absorption and luminescence spectra, photoluminescence decays, and thermoluminescence glow curves were measured together with several other scintillation characteristics, namely, the scintillation decay, light yield, afterglow, and radiation damage to reveal the effect of Mg codoping. Several material characteristics manifest a beneficial effect of Mg codopant. We propose a model explaining the mechanism of material improvement which is based on the stabilization of a part ofthe cerium dopant in the tetravalent charge state. The stable Ce4+ center provides an additional fast radiative recombination pathway in the scintillation mechanism and efficiently competes with electron traps in garnet scintillators.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Crystal Growth & Design

ISSN

1528-7483

e-ISSN

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Volume of the periodical

14

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

7

Pages from-to

4827-4833

UT code for WoS article

000341226500069

EID of the result in the Scopus database

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