Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00436880" target="_blank" >RIV/68378271:_____/14:00436880 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture
Original language description
The paper deals with electrical characterization of nanocrystalline diamond / ptype crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introducednitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.
Czech name
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Czech description
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Project
<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4799-5474-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
37-40
Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 20, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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