MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00448239" target="_blank" >RIV/68378271:_____/14:00448239 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1742-6596/508/1/012009" target="_blank" >http://dx.doi.org/10.1088/1742-6596/508/1/012009</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/508/1/012009" target="_blank" >10.1088/1742-6596/508/1/012009</a>

Result language
angličtina
Original language name
MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors
Original language description
The high energy ions produced with intense pulsed laser were analyzed with SiC detectors. In order to realize high performances and radiation resistant detectors, high quality and thick epitaxial layer were grown on a substrate and a Schottky diodes werethen realized. These detectors were employed to probe the plasma generated with a 300 ps laser at intensity of 1016W/cm2 operating at PALS. They show a fast response and a high sensitivity to high energy ions. Metallic and polymeric thin films were irradiated and the produced plasmas were monitored in forward and backward directions. The analysis of the time-of-flight spectra evidences the emission of protons and ions at different energies. The spectra were deconvolved with a shifted Maxwell Boltzmanndistribution. We detected protons in the energy range 1.2 - 3.0 MeV and heavy ions between 1.0 MeV up to 40 MeV. The results were compared with the ones obtained by Thompson Parabola Spectrometer.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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