Intrinsic light yield and light loss coefficient of Bi4Ge3O12 single crystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00456538" target="_blank" >RIV/68378271:_____/14:00456538 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.optmat.2013.12.034" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2013.12.034</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.optmat.2013.12.034" target="_blank" >10.1016/j.optmat.2013.12.034</a>

Result language
angličtina
Original language name
Intrinsic light yield and light loss coefficient of Bi4Ge3O12 single crystals
Original language description
In this paper we present the scintillation properties of polished Bi4Ge3O12(BGO) crystals grown by the Bridgman method. The light yield (LY) and energy resolution were measured using XP5200B photomultiplier. At 662 keV ?-rays, high LY of 9680 photons/MeVand good energy resolution of 8.6% were obtained for a 5x 5x 1mm3 BGO sample. The intrinsic LY and light loss coef?cient were eval uated. The photofraction in pulse height spectrum of 662 keV ?-rays and the mass attenuation coef?cient at 59.5 and 662 keV ?-rays were also determined and compared with the theoretical ones calculated using the WinXCom program./n
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GAP204%2F12%2F0805" target="_blank" >GAP204/12/0805: Advanced material solutions for thin film scintillators and light transformers</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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