Evaluation of bulk and surface radiation damage of silicon sensors for the ATLAS upgrade

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00469811" target="_blank" >RIV/68378271:_____/14:00469811 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Evaluation of bulk and surface radiation damage of silicon sensors for the ATLAS upgrade
Original language description
The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure. It was verified that different geometries of end-cap sensors do not influence their stability; the sensors should provide acceptable strip isolation and n ew gate PTP structure functions well even at the highest tested proton fluence 2 10 15 n eq / cm 2.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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