Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency > 21%

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00511312" target="_blank" >RIV/68378271:_____/14:00511312 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1109/PVSC.2014.6924898" target="_blank" >http://dx.doi.org/10.1109/PVSC.2014.6924898</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/PVSC.2014.6924898" target="_blank" >10.1109/PVSC.2014.6924898</a>

Result language

angličtina

Original language name

Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency > 21%

Original language description

We report on the development of interdigitated back-contacted silicon heterojunction solar cells with conversion efficiencies well above 21%. Doped hydrogenated amorphous silicon layers, needed for electron and hole collection, are patterned via in-situ shadow masking whereas transparent conductive oxide and metal layers, of the back electrodes, are defined via hot melt inkjet printing of an etch resist and subsequent wet etching. Our technology is therefore photolithography-free and avoids any high-temperature step. The best fabricated solar cell presents a high short-circuit current density of 39.9 mA/cm(2), an open-circuit voltage of 724 mV and a fill factor of 74.5% resulting in a conversion efficiency of 21.5%, with a strong upside potential. We report also on a silver-free IBC-SHJ solar cell with conversion efficiency >20%.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

IEEE Photovoltaic Specialist Conference (PVSC 2014) /40./

ISBN

9781479943982

ISSN

—

e-ISSN

—

Number of pages

5

Pages from-to

3644-3648

Publisher name

IEEE

Place of publication

New York

Event location

Denver

Event date

Jun 8, 2014

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000366638903195