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Origin of slow low-temperature luminescence in undoped and Ce-doped Y2SiO5 and Lu2SiO5 single crystals

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00449045" target="_blank" >RIV/68378271:_____/15:00449045 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1002/pssb.201451234" target="_blank" >http://dx.doi.org/10.1002/pssb.201451234</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/pssb.201451234" target="_blank" >10.1002/pssb.201451234</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Origin of slow low-temperature luminescence in undoped and Ce-doped Y2SiO5 and Lu2SiO5 single crystals

  • Original language description

    At 4.2?300 K, the steady-state and time-resolved emission and excitation spectra as well as the luminescence decay kinetics in the 10 ms?10 us time range are studied for the undoped and Ce3+-doped single crystals of Y2SiO5 and Lu2SiO5. At low temperatures, a broad intrinsic emission band located at 2.55 eV in Y2SiO5 and 2.58 eV in Lu2SiO5 is observed in the luminescence spectra of all the crystals studied under excitation in the charge-transfer absorption region (with Eexc > 4.2 eV). This emission reveals the slow non-exponential decay kinetics characteristic for tunneling recombination processes. In the slow decay kinetics of the low-temperature luminescence of Ce3+-doped crystals, both the multi-exponential and the non exponential decay stages are detected. The origin of the defects, responsible for the undesirable slow low-temperature luminescence of the undoped and Ce3+-doped Y2SiO5 and Lu2SiO5 crystals is considered.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP204%2F12%2F0805" target="_blank" >GAP204/12/0805: Advanced material solutions for thin film scintillators and light transformers</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Status Solidi B-Basic Solid State Physics

  • ISSN

    0370-1972

  • e-ISSN

  • Volume of the periodical

    252

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    8

  • Pages from-to

    274-281

  • UT code for WoS article

    000351159700004

  • EID of the result in the Scopus database

    2-s2.0-84931084129