Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00451366" target="_blank" >RIV/68378271:_____/15:00451366 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1021/nl503806p" target="_blank" >http://dx.doi.org/10.1021/nl503806p</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/nl503806p" target="_blank" >10.1021/nl503806p</a>

Result language
angličtina
Original language name
Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films
Original language description
We report a voltage controlled reversible creation and annihilation of a-axis oriented 10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BE - Theoretical physics
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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