Photoluminescence excitation of rare earth doped fluoride films by surface plasmon resonance in the Kretschman configuration

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455065" target="_blank" >RIV/68378271:_____/15:00455065 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Photoluminescence excitation of rare earth doped fluoride films by surface plasmon resonance in the Kretschman configuration
Original language description
We report on excitation of the photoluminescence of rare earth doped fluoride by means of the surface plasmon resonance of Al layer. The advantage of this method is high efficiency of the excitation, which is applicable to ultra-thin films. The p-polarized UV diode laser light is coupled to surface plasmon resonance using a fused silica prism in a Kretschman configuration. The angular dependence of reflected intensity is measured using a theta-2theta goniometer. The surface plasmon at resonance condition induces the luminescence in the adjacent doped fluoride layer. The luminescence is collected using a fiber optics and detected by a spectrophotometer. For the experiment, we used pure LiF films and doped by Eu, Pr and Yb. The fluoride layer was deposited on Al-coated fused silica substrate by electron beam evaporation. For the experiment, we prepared several samples with thickness up-to 20 nm.
Czech name
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Czech description
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Project
<a href="/en/project/GAP108%2F11%2F1312" target="_blank" >GAP108/11/1312: Fabrication of thin films of UV-Vis-NIR transparent dielectrics by repetitive, capillary-discharge XUV laser ablation</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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