Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455242" target="_blank" >RIV/68378271:_____/15:00455242 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4937388" target="_blank" >http://dx.doi.org/10.1063/1.4937388</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4937388" target="_blank" >10.1063/1.4937388</a>
Alternative languages
Result language
angličtina
Original language name
Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy
Original language description
We used time-resolved terahertz spectroscopy to study ultrafast photoconductivity of polycrystalline thin-film silicon solar cells. We selected a series of samples, which exhibited variable conversion efficiencies due to hydrogen plasma passivation undervarious technological conditions. The decay of the transient terahertz conductivity shows two components: the fast one is related to the charge recombination at interfaces, while the slow nanosecond one is attributed to the trapping of photocarriers bydefects localized at grain boundaries or at dislocations in the polycrystalline p- layer of the structure. We observed a clear correlation between the open-circuit voltage and the nanosecond-scale decay time of the transient terahertz conductivity of thesolar cells. Thus, the terahertz spectroscopy appears to be a useful contactless tool for inspecting the local photoconductivity of solar cells including, in particular, various nanostructured schemes.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA13-12386S" target="_blank" >GA13-12386S: Photoconductivity and dynamics of excitations in nanostructured and disordered semiconductors on ultrafast time scale</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
107
Issue of the periodical within the volume
23
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
"233901-1"-"233901-5"
UT code for WoS article
000367010800068
EID of the result in the Scopus database
2-s2.0-84949199135