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Interrelationship between structural, optical and transport properties of InP1-xBix: DFT approach

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00458861" target="_blank" >RIV/68378271:_____/16:00458861 - isvavai.cz</a>

  • Alternative codes found

    RIV/49777513:23640/16:43928717

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.mssp.2015.08.015" target="_blank" >http://dx.doi.org/10.1016/j.mssp.2015.08.015</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.mssp.2015.08.015" target="_blank" >10.1016/j.mssp.2015.08.015</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Interrelationship between structural, optical and transport properties of InP1-xBix: DFT approach

  • Original language description

    Effect of Bi concentrations on the electronic structure, optical and thermoelectric properties was studied, using the density functional theory. The PDOS of the InP compound elucidates that the valence bands are mainly comprised of P-p states, while the conduction band is mainly formed by foremost In-s and P-p with small contribution of P-s state while in InP/InB alloys the Bi-p stated strongly contribute in valance bands along with P-p states.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Science in Semiconductor Processing

  • ISSN

    1369-8001

  • e-ISSN

  • Volume of the periodical

    41

  • Issue of the periodical within the volume

    Jan

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    9

  • Pages from-to

    45-53

  • UT code for WoS article

    000365189500008

  • EID of the result in the Scopus database

    2-s2.0-84940188737