Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors
Result description
Diamond is considered as a promising tissue equivalent material in radiation therapies as well as for bioelectronic sensors due to its unique set of properties. These features are combined in this work where effects of gamma irradiation on function and stability of microscopic hydrogen-terminated diamond solution-gated field effect transistors are studied. The H-diamond SG-FETs were prepared using 300 nm thin diamond films deposited on glass by microwave plasma. Prior to gamma irradiation they were interfaced to proteins and cells in cell growth medium. Blank H-diamond SG-FETs did not degrade after the irradiation. With adsorbed proteins and cells they showed specific changes in gate current characteristics after the irradiation. These changes are attributed to modified protein layer and cell morphology on the diamond surface. The presented results establish a first step towards real-time electronicmonitoring of cell growth during the irradiation by therapeutically relevant doses.
Keywords
diamond thin filmsfield effect transistorsproteinscellsgamma irradiationatomic force microscopebiosensors
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/67985823:_____/16:00459021 RIV/61389005:_____/16:00459021 RIV/68407700:21230/16:00302981
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors
Original language description
Diamond is considered as a promising tissue equivalent material in radiation therapies as well as for bioelectronic sensors due to its unique set of properties. These features are combined in this work where effects of gamma irradiation on function and stability of microscopic hydrogen-terminated diamond solution-gated field effect transistors are studied. The H-diamond SG-FETs were prepared using 300 nm thin diamond films deposited on glass by microwave plasma. Prior to gamma irradiation they were interfaced to proteins and cells in cell growth medium. Blank H-diamond SG-FETs did not degrade after the irradiation. With adsorbed proteins and cells they showed specific changes in gate current characteristics after the irradiation. These changes are attributed to modified protein layer and cell morphology on the diamond surface. The presented results establish a first step towards real-time electronicmonitoring of cell growth during the irradiation by therapeutically relevant doses.
Czech name
—
Czech description
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Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BO - Biophysics
OECD FORD branch
—
Result continuities
Project
GBP108/12/G108: Preparation, modification and characterization of materials by radiation
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
—
Volume of the periodical
63
Issue of the periodical within the volume
Mar
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
186-191
UT code for WoS article
000371942700034
EID of the result in the Scopus database
2-s2.0-84959204564
Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BO - Biophysics
Year of implementation
2016