Ion-implantation of erbium into the nanocrystalline diamond thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00465018" target="_blank" >RIV/68378271:_____/16:00465018 - isvavai.cz</a>

Alternative codes found

RIV/61389005:_____/16:00465018

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ion-implantation of erbium into the nanocrystalline diamond thin films

Original language description

High-refractive-index nanocrystalline diamond films deposited on borosilicate glass from a CH4/CO2/H2 gas mixture by a linear-antenna microwave plasma-enhanced chemical vapour deposition (MW PECVD) were doped by erbium using ion- implantation technique. The prepared thin films guided an optical signal in the range of 632–1552 nm and revealed measurable luminescence around 1530 nm. The changes of optical properties and surface morphology were studied morenin detail.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Optoelectronics and Advanced Materials

ISSN

1454-4164

e-ISSN

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Volume of the periodical

18

Issue of the periodical within the volume

7-8

Country of publishing house

RO - ROMANIA

Number of pages

6

Pages from-to

679-684

UT code for WoS article

000383819800014

EID of the result in the Scopus database

2-s2.0-84994501816