Photoluminescence of InGaN/GaN MQW structures – technological aspects

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469563" target="_blank" >RIV/68378271:_____/16:00469563 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Photoluminescence of InGaN/GaN MQW structures – technological aspects

Original language description

In this work results obtained on several types of InGaN/GaN multiple quantum well (MQW) scintillator structures are presented. Luminescence properties of scintillator structures with different number of QWs and different growth rate of QWs were measured. We show that the growth rate and QW number are very important parameters to increase the QW excitonic luminescence. Photoluminescence and cathodoluminescence are compared and discussed.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ASDAM 2016

ISBN

978-150903083-5

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

41-44

Publisher name

IEEE

Place of publication

Danvers

Event location

Smolenice

Event date

Nov 13, 2016

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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