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EN
ČeštinaEnglish

GaP-on-Si(100) heterointerfaces studied in situ

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471302" target="_blank" >RIV/68378271:_____/16:00471302 - isvavai.cz</a>

  • Result on the web

    —

  • DOI - Digital Object Identifier

    —

Alternative languages

  • Result language

    angličtina

  • Original language name

    GaP-on-Si(100) heterointerfaces studied in situ

  • Original language description

    We give an overview on how we combine optical in situ RAS during industrially scalable growth processes by MOVPE with electron-based in vacuo surface science analytics in order to study the GaP/Si(001) heterointerface formation and its atomic structure.

  • Czech name

    —

  • Czech description

    —

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

    —

Result continuities

  • Project

    —

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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