Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00477154" target="_blank" >RIV/68378271:_____/17:00477154 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1117/12.2244786" target="_blank" >http://dx.doi.org/10.1117/12.2244786</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2244786" target="_blank" >10.1117/12.2244786</a>

Result language

angličtina

Original language name

Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Original language description

InGaN/GaN multiple QW structures were prepared by MOVPE and characterized by high resolution X-ray diffraction. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source. The photo-, radio- and cathodo-luminescence were measured. We observed double peak luminescence governed by different recombination mechanisms: exciton in QW and related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased from 16 ns to 4 ns when the QW thickness was decreased from 2.4 to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Fourth Conference on Sensors, MEMS, and Electro-Optic Systems

ISBN

978-151060513-8

ISSN

0277-786X

e-ISSN

—

Number of pages

4

Pages from-to

—

Publisher name

SPIE

Place of publication

Bellingham

Event location

Skukuza

Event date

Sep 18, 2016

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000394537200042